F9020

www.DataSheet4U.com FJPF9020 FJPF9020 Monolithic Construction With Built In Base-Emitter Shunt Resistors High Collector-Base Breakdown Voltage : BVCBO = -550V High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) Industrial Use 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 550 - 550 -6 -2 -4 15 150 - 55 ~ 150 Units V V V A A W °C °C R1 R2 E B Equivalent Circuit C R 1 ≅ 600 Ω R 2 ≅ 150 Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC = - 1A, IB = - 20mA IC = - 1A, IB = - 20mA 400 -10 550 -1.0 -1.5 Min. - 550 - 550 -6 -100 -20 700 - 1.5 - 2.0 V V Typ. Max. Units V V V µA mA ©2002 Fairchild Semiconductor Corporation Rev. A, June 2002 www.DataSheet4U.com FJPF9020 Typical Charact...