FGA25N120ANTD

FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C Extremely Enhanced Avalanche Capability Applications Induction Heating, Microwave Oven Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. GCE TO-3P Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25C @ TC = 100C Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 25C @ TC = 100C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25C @ TC = 100C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case The...