2SJ280

www.DataSheet4U.com 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC – DC converter Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings –60 ±20 –30 –120 –30 –30 77 75 150 –55 to +150 Unit V V A A A A mJ W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω www.DataSheet4U.com 2SJ280 L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate ...