2SJ296

www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings –60 ±20 –15 –60 –15 –15 Unit V V A A A A mJ W °C °C EAR* Tch 3 19 2 Pch* 50 150 –55 to +150 Tstg 2 www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr –60 ±20 — — –1.0 — — 8 — — — — — — — — — Typ — — — — — 0.075 0.09 12 1450 670 240 20 95 230 160 –1.5 160 Max — — ±10 –250 –2.25 0.095 0.15 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = –15 A, VGS = 0 IF = –15 A, VGS = 0, diF/dt = 50 A/µ...