SO2222A

SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS Type SO2222 SO 2222A s Marking N13 N20 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY SO2907 AND SO2907A 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2222 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value SO 2222A 75 40 6 0.8 350 -65 to 150 150 60 30 5 Uni t V V V A mW o o C C March 1996 1/5 SO2222/SO2222A THERMAL DATA R t hj-amb R th j-SR Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 350 290 o o C/W C/W Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = 0) Base Cut-off Current (V BE = 0) Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 60 V V BE = -3 V for SO2222A V CE = 60 V V BE = -3 V for SO2222A V CB = rated V CBO V CB = rated V CBO V EB = 3 V for SO2222 for SO2222A I C = 10 mA for SO2222 for SO2222A I C = 10 µ A for SO2222 for SO2222A I E = 10 µ A for SO2222 for SO2222A I C = 150 mA...