TIG002SS

www.DataSheet4U.com Ordering number : ENN7167 TIG002SS N-Channel IGBT TIG002SS Light-Controlling Strobe Applications Features Package Dimensions unit : mm 2203 [TIG002SS] 8 5 Low-saturation voltage. 4V drive. Enhansment type. 4.4 6.0 0.2 0.3 5.0 0.1 1.5 1.8max 1 4 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP Tch Tstg 0.595 1.27 0.43 Conditions Ratings 400 ±6 ±8 Unit V V V A °C °C PW≤500µs, duty cycle≤0.5% 150 150 --40 to +150 Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Cutoff Voltage Collector-to-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)CES ICES IGES VGE(off) VCE(sat)1 VCE(sat)2 Cies Coes Cres Conditions IC=5mA, VGE=0 VCE=320V, VGE=0 VGE=±6V, VCE=0 VCE=10V, IC=1mA IC=150A, VGE=4V IC=60A, VGE=2.5V VCE=10V, f=1MHz VCE=10V, f=1MHz VCE=10V, f=1MHz Ratings min 400 10 ±100 0.5 4.2 2.4 3300 75 40 1.2 5.5 3.4 typ max Unit V µA nA V V V pF pF pF (Note) Handling the TIG002SS requires sufficient care to be taken because it has no protection diode between gate and...