TIG014TS

www.DataSheet4U.com Ordering number : ENN8216 TIG014TS TIG014TS Features N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. 4V drive. Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP Tch Tstg PW≤1ms PW≤500µs, duty cycle≤0.5% Conditions Ratings 400 ±6 ±8 150 150 --40 to +150 Unit V V V A °C °C Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)CES ICES IGES VGE(off) VCE(sat) Cies Coes Cres IC=5mA, VGE=0 VCE=320V, VGE=0 VGE=±6V, VCE=0 VCE=10V, IC=1mA IC=150A, VGE=4V VCE=10V, f=1MHz VCE=10V, f=1MHz VCE=10V, f=1MHz 0.5 4.2 4400 65 60 Conditions Ratings min 400 10 ±10 1.2 5.8 typ max Unit V µA µA V V pF pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to ...