TIG032TS

www.DataSheet4U.com Ordering number : ENA0383 TIG032TS SANYO Semiconductors DATA SHEET TIG032TS Features N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP1 ICP2 dVCE / dt Tch Tstg PW≤1ms PW≤500µs, duty cycle≤0.5%, CM=400µF, VGE=2.5V PW≤500µs, duty cycle≤0.5%, CM=400µF, VGE=4V VCE≤320V, starting Tch=25°C Conditions Ratings 400 ±6 ±8 150 180 400 150 --40 to +150 Unit V V V A A V / µs °C °C Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=±6V, VCE=0V Ratings min 400 10 ±10 typ max Unit V µA µA Marking : G032 Continued on next page. * : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/µs. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home applianc...