GP9962

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/08 REVISED DATE : GP9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 28m 7A Description The GP9962 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low On-Resistance *Single Drive Requirement Features Package Dimensions D GAUGE PLANE E REF. A A1 A2 b b1 b2 b3 c A Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 SEATING PLANE Z Z b L SECTION Z - Z b e DIP-8 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ,VGS@10V Continuous Drain Current ,VGS@10V Pulsed Drain Current 1,2 3 3 c Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 40 20 7 5.5 20 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 62.5 Unit /W 1/4 www.DataSheet4U.com ISSUED DATE :2005/08/08 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 40 1.0 Typ. 0.1 11 13 4 7 10 8 26 9 1170 180 116 Max. ...