2SD1692 TRANSISTOR Datasheet

2SD1692 Datasheet PDF, Equivalent


Part Number

2SD1692

Description

NPN SILICON DARLINGTON TRANSISTOR

Manufacture

NEC

Total Page 3 Pages
Datasheet
Download 2SD1692 Datasheet


2SD1692
DATA SHEET
SILICON POWER TRANSISTOR
2SD1692
NPN SILICON EPITAXIAL TRANSISTOR
(DARLINGTON CONNECTION)
FEATURES
• High DC current gain due to Darlington connection
• Large current capacity and low VCE(sat)
• Large power dissipation TO-126 type power transistor
• Complementary transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT (Ta = 25°C)
PT (Tc = 25°C)
Tj
Tstg
* PW 10 ms, duty cycle 50%
Ratings
150
100
8.0
±3.0
±5.0
1.3
15
150
55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
VCEO(SUS)
ICBO
ICEO
hFE1**
hFE2**
VCE(sat)**
VBE(sat)**
ton
tstg
tf
IC = 3.0 A, IB = 3.0 mA, L = 1.0 mH
VCB = 100 V, IE = 0
VCE = 100 V, RBE =
VCE = 2.0 V, IC = 1.5 A
VCE = 2.0 V, IC = 3.0 A
IC = 1.5 A, IB = 1.5 mA
IC = 1.5 A, IB = 1.5 mA
IC = 1.5 A
IB1 = IB2 = 1.5 mA
RL = 27 , VCC 40 V
** Pulse test PW 350 µs, duty cycle 2%/per pulsed
hFE CLASSIFICATION
Marking
hFE1
M
2,000 to 5,000
L
4,000 to 12,000
K
8,000 to 20,000
MIN.
100
2,000
1,000
TYP.
MAX.
10
1.0
20,000
0.9 1.2
1.5 2.0
0.5
2.0
1.0
Unit
V
µA
mA
V
V
µs
µs
µs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16191EJ1V1DS00 (1st edition)
Date Published December 2004 NS CP(K)
Printed in Japan
2002

2SD1692
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SD1692
With infinite heatsink
Without heatsink
Temperature T (°C)
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
Pulse Width PW (s)
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
2 Data Sheet D16191EJ1V1DS


Features DATA SHEET SILICON POWER TRANSISTOR 2SD1 692 NPN SILICON EPITAXIAL TRANSISTOR (D ARLINGTON CONNECTION) FEATURES • Hig h DC current gain due to Darlington con nection • Large current capacity and low VCE(sat) • Large power dissipatio n TO-126 type power transistor • Comp lementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Paramete r Symbol Collector to base voltage Co llector to emitter voltage Emitter to b ase voltage Collector current (DC) Coll ector current (pulse) Total power dissi pation Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25 °C) PT (Tc = 25°C) Tj Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 150 100 8.0 ±3.0 ±5.0 1.3 15 150 −55 to +150 Unit V V V A A W W °C °C PACK AGE DRAWING (UNIT: mm) Electrode Connec tion ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector to emitter voltage Collector cutoff current Collector cutoff current DC current gain DC current gain Collector sat.
Keywords 2SD1692, datasheet, pdf, NEC, NPN, SILICON, DARLINGTON, TRANSISTOR, SD1692, D1692, 1692, 2SD169, 2SD16, 2SD1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)