2SD1692

DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES High DC current gain due to Darlington connection Large current capacity and low VCE(sat) Large power dissipation TO-126 type power transistor Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 150 100 8.0 ±3.0 ±5.0 1.3 15 150 −55 to +150 Unit V V V A A W W °C °C PACKAGE DRAWING (UNIT: mm) Electrode Connection ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector to emitter voltage Collector cutoff current Collector cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time VCEO(SUS) ICBO ICEO hFE1** hFE2** VCE(sat)** VBE(sat)** ton tstg tf IC = 3.0 A, IB = 3.0 mA, L = 1.0 mH VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 2.0 V, IC = 1.5 A VCE = 2.0 V, IC = 3.0 A IC = 1.5 A, IB = 1.5 mA IC = 1.5 A, IB = 1.5 mA IC = 1.5 A IB1 = −IB2 = 1.5 mA RL = 27 Ω, VCC ≅ 40 V ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/per pulsed hFE CLASSIFICATION Marking hFE1 M 2,000 to 5,000 L 4,000 to 12,000 K...