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TLP350

Toshiba Semiconductor

Photocouplers

www.DataSheet4U.com TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC Preliminary TLP350 Inverter for Air Conditione...


Toshiba Semiconductor

TLP350

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www.DataSheet4U.com TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC Preliminary TLP350 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter The TOSHIBA TLP350 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP350 is suitable for gate driving circuit of IGBT or power MOS FET.. Peak output current: IO = ±2.0 A (max) Guaranteed performance over temperature: −40 to 100°C Supply current:ICC = 2 mA (max) Power supply voltage: VCC = 15 to 30 V Threshold input current : IFLH = 5 mA (max) Switching time (tpLH/tpHL) : 500 ns (max) Common mode transient immunity: 15 kV/µs Isolation voltage: 3750 Vrms JEDEC ― ― 11-10C4 Unit: mm Truth Table Input H L LED ON OFF Tr1 ON OFF Tr2 OFF ON Output H L JEITA TOSHIBA Weight: 0.54 g (typ.) Pin Configuration (top view) 1: NC 2: Anode 3: Cathode 4: NC 5: GND 6: VO (output) 7: NC 8: VCC Schematic (Tr1) IF 2+ VF 3− (Tr2) IO 6 VO 5 GND A 0.1 µF bypass capacitor must be connected between pin 8 and 5. (See Note 6) ICC 8 VCC 1 2 3 4 8 7 6 5 1 2003-10-27 www.DataSheet4U.com TLP350 Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 85°C) LED Peak transient forward current Reverse voltage Junction temperature “H” peak output current Detector “L” peak output current Output voltage Supply voltage Junction temperature Operating frequency Storage temperature range Operating temperature range Lead soldering ...




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