A1208 2SA1208 Datasheet

A1208 Datasheet, PDF, Equivalent


Part Number

A1208

Description

2SA1208

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download A1208 Datasheet


A1208
Ordering number:EN781F
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-Voltage Switching
Audio 80W Output Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast swtching speed.
Package Dimensions
unit:mm
2006A
[2SA1208/2SC2910]
( ) : 2SA1208
Specifications
EIAJ:SC-51
SANYO:MP
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)180
(–)160
(–)5
(–)70
(–)140
900
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
IC=(–)30mA, IB=(–)3mA
100*
150
(2.5)2.0
0.08
(–0.14)
Turn-ON Time
ton See specified Test Circuit
Fall Time
tf See specified Test Circuit
Storage Time
tstg See specified Test Circuit
* : The 2SA1208/2SC2910 are classified by 10mA hFE are follows :
Switching Time Test Circuit
0.1
0.2
1.0
100 R 200 140 S 280 200 T 400
max
(–)0.1
(–)0.1
400*
0.3
(–0.4)
Unit
µA
µA
MHz
pF
V
µs
µs
µs
IC=10IB1=–10IB2=10mA (For PNP, the polarity is reversed)
Unit (resistance : , capacitance : F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4

A1208
2SA1208/2SC2910
No.781-2/4


Features Ordering number:EN781F PNP/NPN Epitaxia l Planar Silicon Transistors 2SA1208/2S C2910 High-Voltage Switching Audio 80W Output Predriver Applications Features · Adoption of FBET process. · High b reakdown voltage. · Excellent linearit y of hFE and small Cob. · Fast swtchin g speed. Package Dimensions unit:mm 20 06A [2SA1208/2SC2910] ( ) : 2SA1208 Sp ecifications EIAJ:SC-51 SANYO:MP B:Ba se C:Collector E:Emitter Absolute Maxi mum Ratings at Ta = 25˚C Parameter Co llector-to-Base Voltage Collector-to-Em itter Voltage Emitter-to-Base Voltage C ollector Current Collector Current (Pul se) Collector Dissipation Junction Temp erature Storage Temperature Symbol VCB O VCEO VEBO IC ICP PC Tj Tstg Conditio ns Ratings (–)180 (–)160 (–)5 ( )70 (–)140 900 150 –55 to +150 U nit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Paramete r Symbol Conditions Ratings min typ Collector Cutoff Current Emitter Cutof f Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Em.
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