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NTP18N06L

ON Semiconductor

Power MOSFET

www.DataSheet4U.com NTP18N06L, NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designe...


ON Semiconductor

NTP18N06L

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Description
www.DataSheet4U.com NTP18N06L, NTB18N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com Power Supplies Converters Power Motor Controls Bridge Circuits 15 AMPERES 60 VOLTS RDS(on) = 100 mW N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 mW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp v 10 ms) Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp v 10 ms) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 60 Vdc, IL(pk) = 11 A, L = 1.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS Value 60 60 "10 "20 15 8.0 45 48.4 0.32 −55 to +175 61 Adc Adc Apk Watts W/°C °C mJ Unit Vdc Vdc Vdc 4 4 1 TO−220AB CASE 221A STYLE 5 2 3 2 3 D2PAK CASE 418AA STYLE 2 S G ID ID IDM PD TJ, Tstg EAS 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain °C/W RqJC RqJA TL 3.1 72.5 260 °C NTx18N06L LLYWW NTx18N06L LLYWW 1 Gate 1 3 Gate Source NTx18N06L 2 x Drain LL Y WW 2 Drain 3 Source = Device Code = B ...




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