LMBD2835LT1G

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device LMBD2835LT1G LMBD2835LT3G LMBD2836LT1G LMBD2836LT3G Marking A3X A3X A2X A2X Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 1 3 LMBD2835LT1G LMBD2836LT1G MAXIMUM RATINGS Rating Peak Reverse Voltage D.C Reverse Voltage Peak Forward Current Average Rectified Current Symbol V RM VR I FM IO Value 75 35 75 450 300 150 100 Unit Vdc Vdc mAdc mAdc 2 LMBD2835LT1G LMBD2836LT1G SOT– 23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ANODE 3 CATHODE 1 2 CATHODE R θ JA PD R θ JA T J , T stg DEVICE MARKING LMBD2835LT1G = A3X;LMBD2836LT1G=A2X ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE ) Characteristic Symbol V (BR) IR LMBD2835LT1 LMBD2836LT1 CT VF — — — — — — — 100 100 4.0 1.0 1.0 1.2 4.0 pF Vdc Min 35 75 Max — — nAdc Unit Vdc OFF CHARACTERISTICS Reverse Breakdown Voltage(I R = 100 µAdc) LMBD2835LT1 LMBD2836LT1 Reverse Voltage Leakage Current (V R = 30 Vdc) (V R = 50 Vdc) Diode Capacitance (...