A94

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR£¨PNP £© TO¡ª 92 FEATURES Power dissipation PCM: 0.625 W Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL unless CHARACTERISTICS £¨Tamb=25 ¡æ specified£© Symbol V (BR) CBO V (BR) CEO V (BR) EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© hFE£¨ 3£© VCE (sat) Collector-emitter saturation voltage VCE (sat) Base-emitter saturation voltage Transition frequency VBE (sat) fT Test £¨ Tamb=25¡æ£© 1.EMITTER 2.BASE 3. COLLECTOR 1 2 3 otherwise Parameter conditions MIN -400 -400 -5 TYP MAX UNIT V V V Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Ic= -100¦Ì A£¬IE=0 IC= -1 mA£¬ IB=0 IE=-100¦Ì A£¬ IC=0 VCB=-400 V, IE=0 VCE=-400 V, IB=0 VEB= -4 V, IC=0 VCE=-10V, IC=-10 mA VCE=-10V, IC=-1mA VCE=-10V, IC=-100 mA IC=-10 mA£¬ IB=-1mA IC=-50 mA£¬ IB=-5mA IC=-10 mA£¬ IB= -1 mA VCE=-20V£¬IC=-10mA f =30MHz -0.1 -5 -0.1 80 70 60 -0.2 -0.3 -0.75 50 300 ¦Ì A ¦Ì A ¦Ì A V V V MHz www.DataSheet4U.com www.DataSheet4U.com TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b ¦Õ e e1 Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14....