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A94 Datasheet, Equivalent, TRANSISTOR.TRANSISTOR TRANSISTOR |
　
　
　
| Part | A94 |
|---|---|
| Description | TRANSISTOR |
| Feature | www. DataSheet4U. com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO. ,LTD TO-92 P lastic-Encapsulate Transistors A94 TRAN SISTOR£¨PNP £© TO¡ª 92 FEATURES Power dissipation PCM: 0. 625 W Collecto r current ICM: -0. 2 A Collector-base vo ltage V(BR)CBO : -400 V Operating and s torage junction temperature range T J  £Â¬ T stg: -55¡æto +150¡æ ELECTRICA L unless CHARACTERISTICS £¨Tamb=25 ¡ æ specified£© Symbol V (BR) CBO V (B R) CEO V (BR) EBO ICBO ICEO IEBO hFE£ ¨ 1£© DC current gain hFE£¨ 2£© h FE£¨ 3£© VCE (sat) Collector-emitte r saturation voltage VCE (sat) Base-emi tter saturation voltage Transition freq uency . |
| Manufacture | Jiangsu Changjiang Electronics |
| Datasheet |
| Part | A94 |
|---|---|
| Description | TRANSISTOR |
| Feature | www. DataSheet4U. com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO. ,LTD TO-92 P lastic-Encapsulate Transistors A94 TRAN SISTOR£¨PNP £© TO¡ª 92 FEATURES Power dissipation PCM: 0. 625 W Collecto r current ICM: -0. 2 A Collector-base vo ltage V(BR)CBO : -400 V Operating and s torage junction temperature range T J  £Â¬ T stg: -55¡æto +150¡æ ELECTRICA L unless CHARACTERISTICS £¨Tamb=25 ¡ æ specified£© Symbol V (BR) CBO V (B R) CEO V (BR) EBO ICBO ICEO IEBO hFE£ ¨ 1£© DC current gain hFE£¨ 2£© h FE£¨ 3£© VCE (sat) Collector-emitte r saturation voltage VCE (sat) Base-emi tter saturation voltage Transition freq uency . |
| Manufacture | Jiangsu Changjiang Electronics |
| Datasheet |
　
　
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