www.DataSheet.co.kr
Ordering number:EN2018A
NPN Epitaxial Planar Silicon Transistor
2SC3807
High hFE, Low-Frequency G...
www.DataSheet.co.kr
Ordering number:EN2018A
NPN Epitaxial Planar Silicon
Transistor
2SC3807
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers.
Package Dimensions
unit:mm 2043A
[2SC3807]
Features
· Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
B : Base C : Collector E : Emitter SANYO : TO-126LP
Conditions
Ratings 30 25 15 2 4 1.2 15 150 –55 to +150
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=5V, IC=1A VCE=10V, IC=50mA VCB=10V, f=1MHz 800 600 260 27 MHz pF 1500 Conditions Ratings min typ max 0.1 0.1 3200 Unit µA µA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other...