SI8900EDB

www.DataSheet4U.com Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.024 @ VGS = 4.5 V 20 0.026 @ VGS = 3.7 V 0.034 @ VGS = 2.5 V 0.040 @ VGS = 1.8 V Bump Side View IS1S2 (A) 7 6.8 5.0 5.5 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices S1 MICRO FOOTt Backside View S2 7 6 S2 Pin 1 Identifier S2 8 5 S2 G1 4 kW Device Marking: 8900E = P/N Code xxx = Date/Lot Traceability Code 4 kW G2 8900E xxx G2 9 4 G1 S1 10 3 S1 N-Channel S1 1 2 S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Source1—Source2 Voltage Gate-Source Voltage Continuous Source1—Source2 Current (TJ = 150_C)a Pulsed Source1—Source2 Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range Package Reflow Conditionsc VPR IR/Convection TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VS1S2 VGS IS1S2 ISM 5 secs 20 Steady State "12 Unit V 7 5.1 10 1.8 5.4 3.9 1 0.5 -55 to 150 215 220 _C W A PD TJ, Tstg 0.9 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Footb t v 5 sec Steady State Steady State RthJA RthJF Symbol Typical 55 95 12 Maximum 70 120 15 Unit _C/W Notes a. Surface Mounted...