IRF9540NLPBF

www.DataSheet4U.com PD - 96030 HEXFET® Power MOSFET l l l l l l l l IRF9540NSPbF IRF9540NLPbF VDSS = -100V RDS(on) = 117mΩ Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L P-Channel Lead-Free D G S ID = -23A D Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D S D2Pak IRF9540NSPbF G D TO-262 IRF9540NLPbF S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Gate Drain Max. -23 -14 -92 3.1 110 0.9 ± 20 84 -14 11 -13 -55 to + 150 300 (1.6mm from case ) Source Units A c Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current W W/°C V mJ A mJ V/ns °C c d Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and c e Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case Junction-to-Ambient (PCB Mount, steady state) RθJA Typ. Max. 1.1 40 Units °C/W ...