TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
2SC5198
Unit: mm
• High break...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
2SC5198
Unit: mm
High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
10
A
Base current
IB
1
A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC
100
W
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 4.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1994-06
1
2013-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter br...
