NPN Transistor. C5198 Datasheet

C5198 Transistor. Datasheet pdf. Equivalent

Part C5198
Description Silicon NPN Transistor
Feature TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Un.
Manufacture Toshiba Semiconductor
Datasheet
Download C5198 Datasheet

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 C5198 Datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 a C5198 Datasheet
Recommendation Recommendation Datasheet C5198 Datasheet




C5198
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
2SC5198
Unit: mm
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SA1941
Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 140 V
Collector-emitter voltage
VCEO 140 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 10 A
Base current
IB 1 A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
PC 100 W
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 4.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-11-02



C5198
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 5 V, IC = 5 A
IC = 7 A, IB = 0.7 A
VBE VCE = 5 V, IC = 5 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SC5198
Min Typ. Max Unit
― ― 5.0 μA
― ― 5.0 μA
140
V
55 160
35 83
0.3 2.0
V
0.9 1.5
V
30 MHz
170
pF
TOSHIBA
C5198
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
NOTE 2:
Note 2 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2010-11-02





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