5STP24H2800

www.DataSheet4U.com VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 2625 A 4120 A 43000 A 0.85 V 0.160 mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA1047-02 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 24H2800 5STP 24H2600 5STP 24H2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 300 mA ≤ 300 mA 1000 V/µs 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.9 kg 36 mm 15 mm 50 kN 45 kN 60 kN ABB Semiconductors AG reserves the right to change specifications without notice. www.DataSheet4U.com 5STP 24H2800 On-state ITAVM ITRMS ITSM It 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 2625 A 4120 A 43000 A 46000 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 3000 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 9245 kA s tp = 8781 kA s tp = VT VT0 rT IH IL On-state voltage Threshold voltage Slope resistance Holding current 1.35 V 0.85 V 0.160 mΩ 25-75 mA 15-60 mA IT = IT = 1500 - 4500 A Tj = 25°C Tj = 125...