H6968CTS

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200610 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4 H6968CTS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) 8 7 6 5 8-Lead Plastic TSSOP-8 Package Code: TS H6968CTS Symbol & Pin Assignment Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Features RDS(on)<32mΩ@VGS=2.5V, ID=5.5A RDS(on)<24mΩ@VGS=4.5V, ID=6.5A Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Li ion Battery Packs Use Designed for Battery Switch Appliactions ESD Protected Q2 Q1 1 2 3 4 Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA ESD Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 6.5 30 Units V V A A W W °C °C/W V Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75oC Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) ESD Protect on Gate and Source *2 o 1.5 0.96 -55 to +150 83 2000 *1: Maximum DC current limited by the package under the ambient condition at room temperature. *2: 1-in2 2oz Cu PCB board H6968CTS HSMC Product Specification www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Static B...