2SK973

www.DataSheet4U.com 2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application DPAK-1 4 4 High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2, 4 12 3 12 3 S type 1. Gate 2. Drain 3. Source 4. Drain 3 L type 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW ≤ 10 µs, duty cycle ≤ 1 % Value at TC = 25 °C Symbol VDSS VGSS ID ID(peak)* IDR Pch** Tch Tstg Ratings 60 ±20 2 8 2 10 150 –55 to +150 Unit V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— www.DataSheet4U.com 2SK973 L , 2SK973 S Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(...