K3934

www.DataSheet4U.com 2SK3934 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVI) 2SK3934 Switching Regulator Applications Low drain-source ON resistance: R DS (ON) = 0.23ƒ¶ (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 500 500 ±30 15 A 60 50 1.08 15 5.0 150 -55~150 W J A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ? SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit 2 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.16mH, IAR = 15 A, R G = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 1 2004-12-03 www.DataSheet4U.com 2S...