K3570

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES 4.5V drive available. Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available 5 ORDERING INFORMATION PART NUMBER PACKAGE 2SK3570 TO-220AB 2SK3570-S TO-262 2SK3570-ZK 2SK3570-Z TO-263 Note TO-220SMD Note TO-220SMD package is produced only in Japan. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) VDSS VGSS 20 V ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note ID(DC) ±48 A ID(pulse) ±160 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 29 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16256EJ2V0DS00 (2nd edi...