SI5475BDC

P-Channel 12-V (D-S) MOSFET Si5475BDC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = - 4.5 V - 12 0.039 at VGS = - 2.5V 0.054 at VGS = - 1.8 V ID (A)a -6 -6 -6 Qg (Typ.) 15.5 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET: 1.8 V Rated 1206-8 ChipFET 1 S D D D D D DG S Bottom View G Marking Code BN XXX Lot Traceability and Date Code D Part # Code P-Channel MOSFET Ordering Information: Si5475BDC-T1-E3 (Lead (Pb)-free) Si5475BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit - 12 ±8 - 6a - 6a - 7.7b,c - 6.2b,c - 20 - 5.2 - 1.3b,c 6.3 4 2.5b,c 1.6b,c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 40 15 Maximum 50 20 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The 12...