D5702

www.DataSheet4U.com NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz ON CHIP OUTPUT POWER CONTROL FUNCTION SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT INTERNAL BLOCK DIAGRAM Pout2 1 8 Pin2 Pout2 2 7 Pin2 GND 3 6 GND DESCRIPTION NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. Pin1 4 5 Pout1 APPLICATIONS 1.9 GHZ Application Ex. PHS etc. 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc. General purpose medium power AGC amplifier ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specified) PART NUMBER SYMBOLS IDS VGS POUT PAE Padj1 Padj2 IRL ORL ISOL OBW PARAMETERS AND CONDITIONS Circuit Current, PIN = -5 dBm, POUT = +20.5 dBm Gate Bias Voltage, PIN = -5 dBm, POUT = +20.5 dBm Output Power, PIN = -5 dBm Power Added Efficiency, PIN = -5 dBm, POUT = +20.5 dBm Adjacent Channel Power 1, PIN = -5 dBm, POUT = +20.5 dBm Adjacent Channel Power 2, PIN = -5 dBm, POUT = +20.5 dBm Input Return Loss, PIN = -20 dBm Output Retur...