TT2202

www.DataSheet4U.com Ordering number : ENN8036 TT2202 TT2202 Features NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 800 5 10 25 3.0 80 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Diode Forward Voltage Fall Time Symbol ICBO ICES VCEO(sus) IEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tf Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=7.2A, IB=1.44A IC=7.2A, IB=1.44A IEC=8A IC=5A, IB1=1A, IB2=-2A 800 40 15 5 8 3 1.5 2 0.3 V V V µs 130 Ratings min typ max 10 1.0 Unit µA mA V mA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applic...