H5N3004P

www.DataSheet4U.com H5N3004P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1523 (Z) Rev.0 Apr. 2002 Features Low on-resistance Low leakage current High speed switching Low gate charge (Qg) Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3004P www.DataSheet4U.com Absolute Maximum Ratings (Ta=25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAPNote Pch 3 Note1 Note1 Ratings 300 ±30 25 100 25 100 25 150 0.833 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Note2 θch-c Tch Tstg Rev.0, Apr. 2002, page 2 of 2 H5N3004P www.DataSheet4U.com Electrical Characteristics (Ta=25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recov...