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H5N3011P

Renesas Technology

N-Channel MOSFET


Description
H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current ...



Renesas Technology

H5N3011P

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