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2SC5857 TRANSISTOR Datasheet |
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| Part Number | 2SC5857 |
| Description | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
| Manufacture | Toshiba Semiconductor |
| Total Page | 5 Pages |
| Datasheet |
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2SC5857
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5857
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1700 V
: VCE (sat) = 1.5 V (max)
: tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1700
750
5
21
42
10.5
75
150
−55~150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut−off Current
Emitter Cut−off Current
Collector − Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
750 ―
―
V
30 ― 60
11 ― 19 ―
5 ― 7.5
― ― 1.5 V
― 1.0 1.5
V
― 2 ― MHz
― 280 ―
pF
― 4.5 ―
― 0.1 ―
µs
― 3.5 ―
― 0.1 ―
µs
1 2004-5-18
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IC – VCE
20
4.0 3.5
3.0
2.5
16 2.0
1.5
12
1.2
1.0
0.8
0.6
8 0.4
IB = 0.2 A
4
Common emitter
Tc = 25℃
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Tc = 100°C
25
hFE – IC
Common emitter
VCE = 5 V
−25
10
1
0.01 0.1 1 10 100
Collector current IC (A)
20
Common emitter
VCE = 5 V
16
IC – VBE
12
Tc = 100°C
−25
8
25
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base−emitter voltage VBE (V)
2
2SC5857
2004-5-18
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| Features | www.DataSheet4U.com 2SC5857 TOSHIBA TRA NSISTOR SILICON NPN TRIPLE DIFFUSED MES A TYPE 2SC5857 HORIZONTAL DEFLECTION O UTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter− Base Voltage Collector Current Base Cur rent Collector Power Dissipation Juncti on Temperature Storage Temperature Rang e DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 750 5 21 42 10.5 75 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2 -16E3A ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut∠’off Current Emitter Cut−off Current Collector − Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector −Emitter Saturation Voltage Base−Em itter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Sw. |
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