2SC5857 TRANSISTOR Datasheet

2SC5857 Datasheet, PDF, Equivalent


Part Number

2SC5857

Description

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

Manufacture

Toshiba Semiconductor

Total Page 5 Pages
Datasheet
Download 2SC5857 Datasheet


2SC5857
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2SC5857
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5857
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1700 V
: VCE (sat) = 1.5 V (max)
: tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1700
750
5
21
42
10.5
75
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
750
V
30 60
11 19
5 7.5
― ― 1.5 V
1.0 1.5
V
2 MHz
280
pF
4.5
0.1
µs
3.5
0.1
µs
1 2004-5-18

2SC5857
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IC – VCE
20
4.0 3.5
3.0
2.5
16 2.0
1.5
12
1.2
1.0
0.8
0.6
8 0.4
IB = 0.2 A
4
Common emitter
Tc = 25
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Tc = 100°C
25
hFE – IC
Common emitter
VCE = 5 V
25
10
1
0.01 0.1 1 10 100
Collector current IC (A)
20
Common emitter
VCE = 5 V
16
IC – VBE
12
Tc = 100°C
25
8
25
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Baseemitter voltage VBE (V)
2
2SC5857
2004-5-18


Features www.DataSheet4U.com 2SC5857 TOSHIBA TRA NSISTOR SILICON NPN TRIPLE DIFFUSED MES A TYPE 2SC5857 HORIZONTAL DEFLECTION O UTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter− Base Voltage Collector Current Base Cur rent Collector Power Dissipation Juncti on Temperature Storage Temperature Rang e DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 750 5 21 42 10.5 75 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2 -16E3A ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut off Current Emitter Cut−off Current Collector − Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector −Emitter Saturation Voltage Base−Em itter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Sw.
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