TYPE TRANSISTOR. 2SC5857 Datasheet

2SC5857 TRANSISTOR. Datasheet pdf. Equivalent


Toshiba Semiconductor 2SC5857
www.DataSheet4U.com
2SC5857
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5857
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1700 V
: VCE (sat) = 1.5 V (max)
: tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1700
750
5
21
42
10.5
75
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
750
V
30 60
11 19
5 7.5
― ― 1.5 V
1.0 1.5
V
2 MHz
280
pF
4.5
0.1
µs
3.5
0.1
µs
1 2004-5-18


2SC5857 Datasheet
Recommendation 2SC5857 Datasheet
Part 2SC5857
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Feature 2SC5857; www.DataSheet4U.com 2SC5857 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5857 HORIZ.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SC5857 Datasheet




Toshiba Semiconductor 2SC5857
www.DataSheet4U.com
IC – VCE
20
4.0 3.5
3.0
2.5
16 2.0
1.5
12
1.2
1.0
0.8
0.6
8 0.4
IB = 0.2 A
4
Common emitter
Tc = 25
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Tc = 100°C
25
hFE – IC
Common emitter
VCE = 5 V
25
10
1
0.01 0.1 1 10 100
Collector current IC (A)
20
Common emitter
VCE = 5 V
16
IC – VBE
12
Tc = 100°C
25
8
25
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Baseemitter voltage VBE (V)
2
2SC5857
2004-5-18



Toshiba Semiconductor 2SC5857
www.DataSheet4U.com
VCE – IB
10
Common emitter
Tc = 25
8
6
Ic = 17 A
4
10
29
8
7
0
0 0.8
16
15
14
13
12
11
1.6 2.4
Base current IB (A)
3.2
4.0
2SC5857
10
1
8
0.1
VCE(sat) – IC
Common emitter
Tc = 25
6
10 IC/IB = 4
0.01
1
10
Collector current IC (A)
100
VCE – IB
10
Common emitter
Tc = 25
8
6
4
10
9
28
7
0
0 0.8
16
15
14
13
12
11
Ic = 17 A
1.6 2.4
Base current IB (A)
3.2
4.0
VCE (sat) – IC
10
Common emitter
Tc = 25
6
1
10
8
0.1
IC/IB = 4
0.01
1
10
Collector current IC (A)
100
VCE – IB
10
Common emitter
Tc = 100
8
6
4
10
9
2
8
7
0
0 0.8
Ic = 17 A
16
15
14
13
12
11
1.6 2.4 3.2
Base current IC (A)
4.0
3
VCE (sat) – IC
10
Common emitter
Tc = 100
6
1
10
8
0.1
IC/IB = 4
0.01
1
10
Collector current IC (A)
100
2004-5-18







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