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TYPE TRANSISTOR. 2SC5858 Datasheet |
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2SC5858
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
z High Voltage
z Low Saturation Voltage
z High Speed
: VCBO = 1700 V
: VCE (sat) = 1.5 V (Max)
: tf(2) = 0.1 μs (Typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
1700
750
5
22
44
11
200
150
−55~150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-21F2A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-22
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ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut−off Current
Emitter Cut−off Current
Collector − Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
2SC5858
MIN TYP. MAX UNIT
――
1 mA
― ― 100 μA
750 ―
―
V
30 ― 60
11 ― 19 ―
5 ― 7.5
― ― 1.5 V
― 1.0 1.5
V
― 2 ― MHz
― 280 ―
pF
― 4.5 ―
― 0.1 ―
μs
― 3.5 ―
― 0.1 ―
μs
2 2006-11-22
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IC – VCE
20
4.0 3.5
3.0
2.5
16
2.0
1.5
12
1.2
1.0
0.8
0.6
8 0.4
IB = 0.2 A
4
Common emitter
Tc = 25℃
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Tc = 100°C
25
hFE – IC
Common emitter
VCE = 5 V
−25
10
1
0.01
0.1
1
10 100
Collector current IC (A)
20
Common emitter
VCE = 5 V
16
IC – VBE
12
Tc = 100°C
−25
8
25
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base−emitter voltage VBE (V)
3
2SC5858
2006-11-22
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