TYPE TRANSISTOR. 2SC5858 Datasheet

2SC5858 TRANSISTOR. Datasheet pdf. Equivalent


Toshiba Semiconductor 2SC5858
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2SC5858
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
z High Voltage
z Low Saturation Voltage
z High Speed
: VCBO = 1700 V
: VCE (sat) = 1.5 V (Max)
: tf(2) = 0.1 μs (Typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
1700
750
5
22
44
11
200
150
55~150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F2A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-22


2SC5858 Datasheet
Recommendation 2SC5858 Datasheet
Part 2SC5858
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Feature 2SC5858; www.DataSheet4U.com 2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZ.
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Datasheet
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Toshiba Semiconductor 2SC5858
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ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
2SC5858
MIN TYP. MAX UNIT
――
1 mA
― ― 100 μA
750
V
30 60
11 19
5 7.5
― ― 1.5 V
1.0 1.5
V
2 MHz
280
pF
4.5
0.1
μs
3.5
0.1
μs
2 2006-11-22



Toshiba Semiconductor 2SC5858
www.DataSheet4U.com
IC – VCE
20
4.0 3.5
3.0
2.5
16
2.0
1.5
12
1.2
1.0
0.8
0.6
8 0.4
IB = 0.2 A
4
Common emitter
Tc = 25
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Tc = 100°C
25
hFE – IC
Common emitter
VCE = 5 V
25
10
1
0.01
0.1
1
10 100
Collector current IC (A)
20
Common emitter
VCE = 5 V
16
IC – VBE
12
Tc = 100°C
25
8
25
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Baseemitter voltage VBE (V)
3
2SC5858
2006-11-22







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