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2SC5858 TRANSISTOR Datasheet |
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| Part Number | 2SC5858 |
| Description | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
| Manufacture | Toshiba Semiconductor |
| Total Page | 6 Pages |
| Datasheet |
www.DataSheet4U.com
2SC5858
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
z High Voltage
z Low Saturation Voltage
z High Speed
: VCBO = 1700 V
: VCE (sat) = 1.5 V (Max)
: tf(2) = 0.1 μs (Typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
1700
750
5
22
44
11
200
150
−55~150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-21F2A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-22
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ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut−off Current
Emitter Cut−off Current
Collector − Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
2SC5858
MIN TYP. MAX UNIT
――
1 mA
― ― 100 μA
750 ―
―
V
30 ― 60
11 ― 19 ―
5 ― 7.5
― ― 1.5 V
― 1.0 1.5
V
― 2 ― MHz
― 280 ―
pF
― 4.5 ―
― 0.1 ―
μs
― 3.5 ―
― 0.1 ―
μs
2 2006-11-22
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| Features | www.DataSheet4U.com 2SC5858 TOSHIBA TRA NSISTOR SILICON NPN TRIPLE DIFFUSED MES A TYPE 2SC5858 HORIZONTAL DEFLECTION O UTPUT FOR HDTV, DIGITAL TV, PROJECTION TV z High Voltage z Low Saturation Volt age z High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (Max) : tf(2) = 0.1 μs ( Typ.) Unit: mm ABSOLUTE MAXIMUM RATING S (Tc = 25°C) CHARACTERISTIC Collector −Base Voltage Collector−Emitter Vol tage Emitter−Base Voltage Collector C urrent Base Current Collector Power Dis sipation Junction Temperature Storage T emperature Range DC Pulse SYMBOL VCBO V CEO VEBO IC ICP IB PC Tj Tstg RATING 17 00 750 5 22 44 11 200 150 −55~150 UNI T V V V A A W °C °C JEDEC JEITA TOSH IBA ― ― 2-21F2A Note: Using conti nuously under heavy loads (e.g. the app lication of high Weight: 9.75 g (typ.) temperature/current/voltage and the sig nificant change in temperature, etc.) m ay cause this product to decrease in th e reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are wi. |
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