2SC5858 TRANSISTOR Datasheet

2SC5858 Datasheet, PDF, Equivalent


Part Number

2SC5858

Description

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
Datasheet
Download 2SC5858 Datasheet


2SC5858
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2SC5858
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
z High Voltage
z Low Saturation Voltage
z High Speed
: VCBO = 1700 V
: VCE (sat) = 1.5 V (Max)
: tf(2) = 0.1 μs (Typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
1700
750
5
22
44
11
200
150
55~150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F2A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-22

2SC5858
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ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 17 A
IC = 17 A, IB = 4.25 A
IC = 17 A, IB = 4.25 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 9 A , IB1 (end) = 1.4 A
fH = 32 kHz
ICP = 8 A, IB1 (end) = 1.2 A
fH = 45 kHz
2SC5858
MIN TYP. MAX UNIT
――
1 mA
― ― 100 μA
750
V
30 60
11 19
5 7.5
― ― 1.5 V
1.0 1.5
V
2 MHz
280
pF
4.5
0.1
μs
3.5
0.1
μs
2 2006-11-22


Features www.DataSheet4U.com 2SC5858 TOSHIBA TRA NSISTOR SILICON NPN TRIPLE DIFFUSED MES A TYPE 2SC5858 HORIZONTAL DEFLECTION O UTPUT FOR HDTV, DIGITAL TV, PROJECTION TV z High Voltage z Low Saturation Volt age z High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (Max) : tf(2) = 0.1 μs ( Typ.) Unit: mm ABSOLUTE MAXIMUM RATING S (Tc = 25°C) CHARACTERISTIC Collector −Base Voltage Collector−Emitter Vol tage Emitter−Base Voltage Collector C urrent Base Current Collector Power Dis sipation Junction Temperature Storage T emperature Range DC Pulse SYMBOL VCBO V CEO VEBO IC ICP IB PC Tj Tstg RATING 17 00 750 5 22 44 11 200 150 −55~150 UNI T V V V A A W °C °C JEDEC JEITA TOSH IBA ― ― 2-21F2A Note: Using conti nuously under heavy loads (e.g. the app lication of high Weight: 9.75 g (typ.) temperature/current/voltage and the sig nificant change in temperature, etc.) m ay cause this product to decrease in th e reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are wi.
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