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2SC5858 Datasheet PDF

SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

2SC5858
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2SC5858
2SC5858
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Toshiba Electronic Components Datasheet
2SC5858
www.DataSheet4U.com
IC – VCE
20
4.0 3.5
3.0
2.5
16
2.0
1.5
12
1.2
1.0
0.8
0.6
8 0.4
IB = 0.2 A
4
Common emitter
Tc = 25℃
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Tc = 100°C
25
hFE – IC
Common emitter
VCE = 5 V
−25
10
1
0.01
0.1
1
10 100
Collector current IC (A)
20
Common emitter
VCE = 5 V
16
IC – VBE
12
Tc = 100°C
−25
8
25
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base−emitter voltage VBE (V)
3
2SC5858
2006-11-22

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