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2SC5858
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV
z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (Max) : tf(2) = 0.1 μs (Typ.) Unit: mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 750 5 22 44 11 200 150 −55~150 UNIT V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F2A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2006-11-22
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2SC5858
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector − Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 9 A , IB1 (end) = 1.4 A fH = 32 kHz ICP = 8 A, IB1 (end) = 1.2 A fH = 45 kHz MIN ― ― 750 30 11 5 ― ― ― ― ― ― ― ― TYP. ― ― ― ― ― ― ― 1.0 2 280 4.5 0.1 3.5 0.1 MAX 1 100 ― 60 19 7.5 1.5 1.5 ― ― ― ― ― ― V V MHz pF μs ― UNIT mA μA V
μs
2
2006-11-22
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2SC5858
IC – VCE
20
4.0
3.5 3.0 2.5
16
2.0 1.5
(A)
Collector current IC
12
1.2 1.0 0.8 0.6
8
0.4 IB = 0.2 A
4 Common emitter Tc = 25℃ 0 0 2 4 6 8 10
Collector-emitter voltage
VCE (V)
hFE – IC
100 Tc = 100°C 25 Common emitter VCE = 5 V
DC current gain hFE
−25
10
1 0.01
0.1
1
10
100
Collector current IC
(A)
IC – VBE
20 Common emitter VCE = 5 V
16
Collector current IC
(A)
12 Tc = 100°C 8 −25
25 4
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base−emitter voltage
VBE (V)
3
2006-11-22
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2SC5858
VCE – IB VCE(sat) – IC
10 Common emitter Tc = −25℃ Common emitter Tc = −25℃ 6
10
VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
8
1 10 IC/IB = 4
Collector-emitter.