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2SC5858 Dataheets PDF



Part Number 2SC5858
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Datasheet 2SC5858 Datasheet2SC5858 Datasheet (PDF)

www.DataSheet4U.com 2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (Max) : tf(2) = 0.1 μs (Typ.) Unit: mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage T.

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www.DataSheet4U.com 2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1700 V : VCE (sat) = 1.5 V (Max) : tf(2) = 0.1 μs (Typ.) Unit: mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 750 5 22 44 11 200 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-22 www.DataSheet4U.com 2SC5858 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector − Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 17 A IC = 17 A, IB = 4.25 A IC = 17 A, IB = 4.25 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 9 A , IB1 (end) = 1.4 A fH = 32 kHz ICP = 8 A, IB1 (end) = 1.2 A fH = 45 kHz MIN ― ― 750 30 11 5 ― ― ― ― ― ― ― ― TYP. ― ― ― ― ― ― ― 1.0 2 280 4.5 0.1 3.5 0.1 MAX 1 100 ― 60 19 7.5 1.5 1.5 ― ― ― ― ― ― V V MHz pF μs ― UNIT mA μA V μs 2 2006-11-22 www.DataSheet4U.com 2SC5858 IC – VCE 20 4.0 3.5 3.0 2.5 16 2.0 1.5 (A) Collector current IC 12 1.2 1.0 0.8 0.6 8 0.4 IB = 0.2 A 4 Common emitter Tc = 25℃ 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) hFE – IC 100 Tc = 100°C 25 Common emitter VCE = 5 V DC current gain hFE −25 10 1 0.01 0.1 1 10 100 Collector current IC (A) IC – VBE 20 Common emitter VCE = 5 V 16 Collector current IC (A) 12 Tc = 100°C 8 −25 25 4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base−emitter voltage VBE (V) 3 2006-11-22 www.DataSheet4U.com 2SC5858 VCE – IB VCE(sat) – IC 10 Common emitter Tc = −25℃ Common emitter Tc = −25℃ 6 10 VCE (V) Collector-emitter saturation voltage VCE(sat) (V) 8 1 10 IC/IB = 4 Collector-emitter.


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