2SC5556

Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm ■ Features Low noise figure NF 0.40+–00..0150 3 0.16+–00..0160 1.50–+00..0255 2.8–+00..32 High transition frequency fT 0.4±0.2 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 V c e. d ty Collector-emitter voltage (Base open) VCEO 10 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Collector current IC 80 mA lifecy , dis Collector power dissipation * PC 300 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C four ntinu Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.0 mm in thickness Marking Symbol: 3K 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package ain onincludestyfpoell,opwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C c tinued ance Parameter Symbol Conditions Min Typ Max Unit M is con inten Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V /Dis , ma Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 10 V D ance type Collector-base cutoff current (Emitter open) ICBO VCB = 10...