type Transistor. 2SC5556 Datasheet

2SC5556 Transistor. Datasheet pdf. Equivalent

Part 2SC5556
Description Silicon NPN epitaxial planar type Transistor
Feature www.DataSheet4U.com Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise am.
Manufacture Panasonic Semiconductor
Datasheet
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2SC5556
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2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Features
Low noise figure NF
High transition frequency fT
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
15
10
2
80
300
150
55 to +150
V
V
V
mA
mW
°C
°C
Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.0 mm in thickness
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 3K
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
10
V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
1 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0
1 µA
Forward current transfer ratio
hFE VCE = 8 V, IC = 20 mA
110 250
Transition frequency
fT VCE = 8 V, IC = 20 mA, f = 800 MHz
5
6
GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.9 1.2
pF
Foward transfer gain
Maximum unilateral power gain
Noise figure
S21e2
GUM
NF
VCE = 8 V, IC = 20 mA, f = 800 MHz
VCE = 8 V, IC = 20 mA, f = 800 MHz
VCE = 8 V, IC = 20 mA, f = 800 MHz
7.5 10.0
11.5
1.7
dB
dB
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00278BED
1



2SC5556
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PC Ta
350
300
250
200
150
100
50
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
90 Ta = 25°C
IB = 600 µA
80
500 µA
70
400 µA
60
50 300 µA
40
200 µA
30
20 100 µA
10
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
1
IC / IB = 10
0.1 Ta = 85°C
25°C
25°C
0.01
1
10 100
Collector current IC (mA)
200
180
160
140
120
100
80
60
40
20
0
1
hFE IC
Ta = 85°C
VCE = 8 V
25°C
25°C
10 100 1 000
Collector current IC (mA)
Cob VCB
10
f = 1 MHz
Ta = 25°C
1
0.1
0 5 10 15 20 25
Collector-base voltage VCB (V)
2 SJC00278BED





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