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2SC5556 Datasheet, Equivalent, NPN Transistor.Silicon NPN Transistor Silicon NPN Transistor |
 
 
 
Part | 2SC5556 |
---|---|
Description | Silicon NPN Transistor |
Feature | Transistors
2SC5556
Silicon NPN epitaxia l planar type
For UHF band low-noise a mplification
Unit: mm
â– Features †¢ Low noise figure NF
0. 40+–00. . 0150 3 0. 16+–00. . 0160 1. 50–+00. . 0255 2. 8–+00. . 32 • High transition freq uency fT 0. 4±0. 2 • Mini type packa ge, allowing downsizing of the equipmen t and automatic insertion through the tape packing and the magazine 1 2 pa cking (0. 95) (0. 95) 5Ëš (0. 65) 1. 9 ±0. 1 / â– Absolute Maximum Ratings Ta = 25°C 2. 90+–00. . 0250 10Ëš Param eter Symbol Rating Unit e pe) Collec tor-base voltage (Emitter open) VCBO 1 5 V c e. d ty Collector-emitter volta . |
Manufacture | Panasonic Semiconductor |
Datasheet |
Part | 2SC5556 |
---|---|
Description | Silicon NPN Transistor |
Feature | Transistors
2SC5556
Silicon NPN epitaxia l planar type
For UHF band low-noise a mplification
Unit: mm
â– Features †¢ Low noise figure NF
0. 40+–00. . 0150 3 0. 16+–00. . 0160 1. 50–+00. . 0255 2. 8–+00. . 32 • High transition freq uency fT 0. 4±0. 2 • Mini type packa ge, allowing downsizing of the equipmen t and automatic insertion through the tape packing and the magazine 1 2 pa cking (0. 95) (0. 95) 5Ëš (0. 65) 1. 9 ±0. 1 / â– Absolute Maximum Ratings Ta = 25°C 2. 90+–00. . 0250 10Ëš Param eter Symbol Rating Unit e pe) Collec tor-base voltage (Emitter open) VCBO 1 5 V c e. d ty Collector-emitter volta . |
Manufacture | Panasonic Semiconductor |
Datasheet |
 
 
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