90N20 Datasheet | N-channel Enhancement Mode Avalanche Rated





90N20 PDF File (Datasheet) Download

Part Number 90N20
Description N-channel Enhancement Mode Avalanche Rated
Manufacture IXYS Corporation
Total Page 4 Pages
PDF Download Download 90N20 PDF File

Features: www.DataSheet4U.com HiPerFETTM Power MO SFETs N-Channel Enhancement Mode Avalan che Rated, High dv/dt, Low trr Symbol T est Conditions VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 2 3 mW 23 mW 20 mW 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns TO-264 AA T O-264 AA (IXFK) Maximum Ratings IXFK I XFN IXFN 90N20 100N20 106N20 200 200 20 0 V 200 ±20 ±30 90  76 360 50 30 5 500 200 ±20 ±30 100 400 50 30 5 520 1 50 -55 ... +150 200 V 20 V 20 V 106 A A 424 A A 30 mJ 5 V/ns W °C °C °C °C V~ V~ VDSS VDGR VGS VGSM ID25 ID80 ID M IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight TJ = 25°C to 150°C TJ = 2 5°C to 150°C; RGS = 1 MW Continuous T ransient TC = 25°C, Chip capability TC = 80°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C G D S (TAB) miniBL OC, SOT-227 B (IXFN) E153432 S D G G S S S D G = Gate S = Source D = Drain TAB = Drain -55 ... +150 Either Source terminal.

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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D80
I
DM
I
AR
EAR
dv/dt
PD
T
J
TJM
Tstg
TL
VISOL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C, Chip capability
T
C
= 80°C, limited by external leads
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
IXFK 90 N 20
IXFN 100 N 20
IXFN 106 N 20
Maximum Ratings
IXFK
IXFN IXFN
90N20 100N20 106N20
200 200 200 V
200 200 200 V
±20 ±20 20 V
±30 ±30 20 V
90 
76
360
50
100 106 A
-A
400 424 A
50 A
30 30 30 mJ
5 5 5 V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Symbol
VDSS
VGH(th)
IGSS
IDSS
R
DS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200
2
TJ = 25°C
TJ = 125°C
V
4V
±200 nA
400 mA
2 mA
IXFK90N20
IXFN100N20
IXFN106N20
0.023
0.023
0.020
W
W
W
V
DSS
I
D25
200 V 90 A
200 V 100 A
200 V 106 A
trr £ 200 ns
TO-264 AA
TO-264 AA (IXFK)
R
DS(on)
23 mW
23 mW
20 mW
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l International standard packages
q JEDEC TO-264 AA, epoxy meet
UL94V-0, flammability classification
q miniBLOC with Aluminium nitride
isolation
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92804H (7/97)
1-4

           






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