2SD330

Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features · Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313. Package Dimensions unit:mm 2010C [2SB514/2SD330] ( ) : 2SB514 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)20V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE1 VCE=(–)2V, IC=(–)1A hFE2 VCE=(–)2V, IC=(–)0.1A Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)0.5A Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2A, IB=(–)0.2A Base-to-Emitter Voltage VBE IC=(–)1A, VCE=–(–)5V * : The 2SB514/2SD330 are classified by 1A hFE as follows : 40 C 80 60 D 120 100 E 200 160 F 320 JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings Unit (–)50 V (–)50 V (–)5 V (–)2 A (–)5 A 1.75 W 20 W 150 ˚C –55 to +150 ˚C Ratings min typ 40* 35 8 max (–)0.1 (–)1.0 320* (–)1.0 (–)1.5 Unit mA mA MHz V V Any and all SANYO products described or contained herein do not have specifications that ...