2SA1641. A1641 Datasheet

A1641 2SA1641. Datasheet pdf. Equivalent


Sanyo Semicon Device A1641
Ordering number:EN2926A
PNP Epitaxial Planar Silicon Transistor
2SA1641
High-Current Switching Applications
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Fast switching speed.
· Large current capacity.
· Small and slim package making it easy to make
2SA1641-used set smaller.
Package Dimensions
unit:mm
2045B
[2SA1641]
unit:mm
2044B
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SA1641]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/8219MO/4049MO, TS No.2926-1/4


A1641 Datasheet
Recommendation A1641 Datasheet
Part A1641
Description 2SA1641
Feature A1641; www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Manufacture Sanyo Semicon Device
Datasheet
Download A1641 Datasheet




Sanyo Semicon Device A1641
2SA1641
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Base Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=–20V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–500mA
VCE=–2V, IC=–6A
VCE=–2V, IC=–500mA
IC=–5A, IB=–250mA
IC=–5A, IB=–250mA
VCB=–10V, f=1MHz
IC=–10µA, IE=0
IC=–1mA, RBE=
IE=–10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
* : The 2SA1641 is classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
Ratings
–25
–20
–5
–8
–12
–1.5
1
15
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Ratings
min typ
100*
60
–25
–20
–5
200
–220
–1
85
30
200
15
max
–1
–1
400*
–400
–1.3
300
800
150
Unit
µA
µA
MHz
mV
V
pF
V
V
V
ns
ns
ns
20IB1=–20IB2=IC=–5A
Unit (resisitance : , capacitance : F)
No.2926-2/4



Sanyo Semicon Device A1641
2SA1641
No.2926-3/4







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