APM4538K MOSFET Datasheet

APM4538K Datasheet, PDF, Equivalent


Part Number

APM4538K

Description

Dual Enhancement Mode MOSFET

Manufacture

Anpec Electronics

Total Page 13 Pages
Datasheet
Download APM4538K Datasheet


APM4538K
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APM4538K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
N-Channel
36V/5A,
R
DS(ON)
=50m(typ.)
@
V
GS
=
10V
RDS(ON) =60m(typ.) @ VGS = 4.5V
P-Channel
-36V/-4A,
RDS(ON) =60m(typ.) @ VGS =-10V
R
DS(ON)
=80m(typ.)
@
V
GS
=-4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of SOP 8
(8) (7)
D1 D1
(3)
S2
(4)
G2
(2)
G1
S1
(1)
N-Channel MOSFET
D2 D2
(5) (6)
P-Channel MOSFET
Ordering and Marking Information
APM4538
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4538 K :
APM4538
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw

APM4538K
www.DataSheet4U.com
APM4538K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
VGS=±10V
PD* Power Dissipation
TA=25°C
TA=100°C
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
N Channel P Channel
36 -36
±16 ±16
5 -4
20 -16
1.7 -1.7
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a
Drain-Source On-State
Resistance
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=30V, VGS=0V
TJ=85°C
VDS=-30V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±16V, VDS=0V
VGS=10V, IDS=5A
VGS=-10V, IDS=-4A
VGS=4.5V, IDS=4A
VGS=-4.5V, IDS=-3A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM4538K
Unit
Min. Typ. Max.
36
V
-36
1
30
µA
-1
-30
0.7 1.1 1.5
-1 -1.5 -2
V
±100
±100
nA
50 65
60 80
m
60 80
80 100
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw


Features www.DataSheet4U.com APM4538K Dual Enhan cement Mode MOSFET (N-and P-Channel) F eatures • N-Channel 36V/5A, RDS(ON) = 50mΩ(typ.) @ VGS = 10V RDS(ON) =60m (typ.) @ VGS = 4.5V Pin Description D 1 D1 D2 D2 • P-Channel -36V/-4A, RD S(ON) =60mΩ(typ.) @ VGS =-10V RDS(ON) =80mΩ(typ.) @ VGS =-4.5V S1 G1 S2 G 2 Top View of SOP − 8 (8) D1 (7) D1 (3) S2 • • • Super High Dense C ell Design Reliable and Rugged Lead Fre e Available (RoHS Compliant) (2) G1 (4 ) G2 Applications • Power Management in Notebook Computer, Portable Equipme nt and Battery Powered Systems S1 (1) D2 (5) D2 (6) N-Channel MOSFET P-Ch annel MOSFET Ordering and Marking Info rmation APM4538 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Cod e TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Origi nal Device XXXXX - Date Code APM4538 K : APM4538 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach.
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