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PD20015-E PD20015S-E
RF power transistor - LdmoST family
Preliminary Data
Features
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Ex...
www.DataSheet4U.com
PD20015-E PD20015S-E
RF power
transistor - LdmoST family
Preliminary Data
Features
■ ■ ■ ■ ■ ■
Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive
PowerSO-10RF (formed lead)
Description
The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/ (look for application note AN1294)
PowerSO-10RF (straight lead)
Figure 1.
Pin connection Source
Gate
Drain
Table 1.
Device summary
Order code PD20015-E PD20015S-E PD20015TR-E PD20015STR-E Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Packing Tube Tube Tape and reel Tape...