MRF7S21150HR3

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. CT13ylip5pi0pcianmlgAS, ,iCnPgholaeunt-n=Cea4l r4BriaWenradWtwts-idCAthDvgM=.,A3F.Pu8l4el rFMforHermqzu,aeInnncpceuy:tVBSDaigDnnd=a, l2IQP8AMVRoal=gtsn7,i.tI5uDdQdeB= @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW Output Power Pout @ 1 dB Compression Point w 150 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF7S21150H Rev. 1, 4/2009 MRF7S21150HR3 MRF7S21150HSR3 2110 - 2170 MHz, 44 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465- 06, STYLE 1 NI - 780 MRF7S21150HR3 CASE 465A - 06, STYLE 1 NI...