Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
...
Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
CT13ylip5pi0pcianmlgAS, ,iCnPgholaeunt-n=Cea4l r4BriaWenradWtwts-idCAthDvgM=.,A3F.Pu8l4el rFMforHermqzu,aeInnncpceuy:tVBSDaigDnnd=a, l2IQP8AMVRoal=gtsn7,i.tI5uDdQdeB= @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW Output Power
Pout @ 1 dB Compression Point w 150 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C
Operation Designed for Digital Predistortion Error Correction Systems RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S21150H Rev. 1, 4/2009
MRF7S21150HR3 MRF7S21150HSR3
2110 - 2170 MHz, 44 W AVG., 28 V SINGLE W - CDMA
LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465- 06, STYLE 1 NI - 780
MRF7S21150HR3
CASE 465A - 06, STYLE 1 NI...