BR103

www.DataSheet4U.com Philips Semiconductors Product Specification Silicon Bi-directional Trigger Device BR100/03 LLD GENERAL DESCRIPTION Silicon bidirectional trigger device in a glass envelope suitable for surface mounting. The device is intended for use in triac and thyristor trigger circuits. QUICK REFERENCE DATA SYMBOL V(BO) VO IFRM PARAMETER Breakover voltage Output voltage Repetitive peak forward current MIN. 28 7 MAX. 36 2 UNIT V V A OUTLINE - SOD80 SYMBOL LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL IFRM Ptot Tstg Tj PARAMETER Repetitive peak forward current Total power dissipation Storage temperature Operating junction temperature CONDITIONS t ≤ 10 µs, Ttp ≤ 50˚C; f = 60 Hz Ttp = 50˚C MIN. -55 MAX. 2 150 125 100 UNIT A mW ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-tp PARAMETER CONDITIONS MIN. TYP. 330 MAX. UNIT K/W Thermal resistance junction to PCB mounted tie point CHARACTERISTICS Ta = 25 ˚C unless otherwise stated. SYMBOL V(BO) |V(BO)+| - |V(BO)-| VO I(BO) dV(BO)/dT tr PARAMETER Breakover voltage Breakover voltage symmetry Output voltage Breakover current Temperature coefficient of V(BO) Risetime CONDITIONS I = I(BO) I = I(BO), see fig: 1 RL = 20 Ω; Circuit of fig: 2 V = V(BO) Ip = 0.5 A; Circuit of fig: 2 MIN. 28 7 TYP. 32 0.1 1.5 MAX. UNIT 36 3.5 50 V V V µA %/K µs February 1996 1 Rev 1.000 www.DataSheet4U.com Philips Semiconductors Product Specification Silicon Bi-directional Trigger Device BR100...