2SK3752-01R

www.DataSheet4U.com 2SK3752-01R FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive and Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Symbol Ratings V DS 500 ID ±16 ID(puls] ±64 VGS ±30 IAS 16 EAS dV DS/dt dV/dt PD 212.2 20 5 3.13 95 +150 -55 to +150 Unit V A A V A mJ kV/s kV/µs W Remarks Tch < =150°C *1 VDS < = 500V *2 Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Operating and storage Tch °C temperature range Tstg °C Isolation voltage VISO 2 kVrms t=60sec f=60Hz *1 L=1.52mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph < *2 IF < = BVDSS, Tch = 150°C = -ID, -di/dt=50A/µs, VCC < Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time...