2SK3755

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3755 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3755 PACKAGE Isolated TO-220 FEATURES Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A) Low C iss: C iss = 1200 pF TYP. Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±45 ±140 24 2.0 150 −55 to +150 23 53 53 V V A A W W °C °C A mJ mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 Note3 IAS EAS EAR Repetitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V 3. IAR ≤ 23 A, Tch ≤ 150°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16641EJ1V0DS00 (1st edition)...