AWT6251

www.DataSheet4U.com AWT6251 PCS/WCDMA 3.4V/27.5 dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES InGaP HBT Technology High Efficiency: 38% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.56 mm Max RoHS Compliant Package Option, 250 oC MSL-3 AWT6251 APPLICATIONS Dual Mode 3GPP Wireless Handsets M7 Package 10 Pin 4 mm x 4 mm x 1.5 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6251 meets the increasing demands for higher output power in 3GPP handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GND at slug (pad) VCC RFIN GND 1 2 3 Bias Control 10 VCC 9 8 7 6 GND RFOUT GND GND VMODE 4 VREF 5 Figure 1: Block Diagram 06/2005 AWT6251 www.DataSheet4U.com GND VCC RFIN GND VMODE VREF 1 2 3 4 5 GND 10 VCC 9 8 7 6 GND RFOUT GND GND Figure 2: Pinout (X-...