AWT6275

www.DataSheet4U.com TM AWT6275 HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.8 FEATURES InGaP HBT Technology High Efficiency: 43% @ POUT = +27.5 dBm 21% @ POUT = +16 dBm 15% @ POUT = +7 dBm Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package Option: 1.1 mm Max RoHS Compliant Package, 250 oC MSL-3 HSDPA Capable Dual Band WCDMA Wireless Handsets Dual Mode 3GPP Wireless Handsets bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. AWT6275 M20 Package 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module APPLICATIONS PRODUCT DESCRIPTION The AWT6275 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable GND at slug (pad) VCC RFIN GND 1 2 3 Bias Control 10 VCC 9 8 7 6 GND RFOUT GND GND VMODE 4 VREF 5 Figure 1: Block Diagram 07/2005 AWT6275...