MTD3055VL

www.DataSheet4U.com MTD3055VL August 1999 DISTRIBUTION GROUP* MTD3055VL General Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V • Critical DC electrical parameters specified at elevated temperature. • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. ' * 6 72 ' * 6 R $EVROXWH 0D[LPXP 5DWLQJV 6\PERO W '66 W *66 D' 9…hvT‚ˆ …prÃW‚y‡htr B h‡rT‚ˆ…prÃW‚y‡htr ÃÃÃÃÃÃà U &2!$ 8 ȁyr††Ã‚‡ur… v†rÁ‚‡rq 3DUDPHWHU 5DWLQJV % 8QLWV W W 6 ± !   H h‘v€ ˆ€ Ã9…hvÃ8ˆ……r‡ÃÃÃÃ8‚‡vˆ‚ˆ†ÃÃÃÃÃÃÃÃÃÃÃÃÃÃà I ‚‡rà ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU & Ã2à H h‘v€ ˆ€ Ã9…hvÃ8ˆ……r‡ÃÃÃÃQˆy†rq  8ÃÃÃÃÃÃÃà I ‚‡rà ! ' #! R Q' H h‘v€ ˆ€ ÃQ‚ r…Ã9v††vƒh‡v‚Ã5 ÃÃU & Ã2Ã!$ 8ÃÃÃÃÃÃÃÃà I ‚‡rà ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ...