N01L083WC2A

www.DataSheet4U.com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L083WC2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx8 bit Overview The N01L083WC2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as NanoAmp’s N01L1618N1A, which is processed to operate at lower voltages. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L083WC2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 128Kb x 8 SRAMs Features Single Wide Power Supply Range 2.3 to 3.6 Volts Very low standby current 2.0µA at 3.0V (Typical) Very low operating current 2.0mA at 3.0V and 1µs (Typical) Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) Simple memory control Dual Chip Enables (CE1and CE2) Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.8V Very fast output enable access time 30ns OE access time Automatic power down to standby mode TTL compatible three-...