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C1568 Dataheets PDF



Part Number C1568
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description 2SC1568
Datasheet C1568 DatasheetC1568 Datasheet (PDF)

Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances and high efficiency with a lowvoltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts 1.9.

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Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances and high efficiency with a lowvoltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 18 V n d stag tinue Collector-emitter voltage (Base open) VCEO 18 V a e cle con Emitter-base voltage (Collector open) VEBO 5 V lifecy , dis Collector current IC 1 A n u duct typed Peak collector current ICP 2 A te tin Pro ed Collector power dissipation PC 1.2 W ur tinu Junction temperature Tj 150 °C ing fo iscon Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 4.6±0.2 2.3±0.2 0.5±0.1 1.76±0.1 123 1: Emitter 2: Collector 3: Base TO-126B-A1 Package in n es follopwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C a o includ type, Parameter Symbol Conditions Min Typ Max Unit c ued nce Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 18 V M is ntin tena Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 18 V isco ain Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 1 µA D nanc e typ Collector-emitter cutoff current (Base open) ICEO VCE = 18 V, IB = 0 10 µA inte anc Forward current transfer ratio hFE1 * VCE = 2 V, IC = 500 mA 90 280  Ma inten hFE2 VCE = 2 V, IC = 1.5 A 50 100 ma Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 50 mA 0.5 V laned Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 1.2 V (p Transition frequency fT VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = 6 V, IE = 0, f = 1 MHz 12 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 90 to 155 130 to 210 180 to 280 Publication date: January 2003 SJD00093BED 1 2SC1568 Collector power dissipation PC (W) Collector-emitter saturation voltage VCE(sat) (V) PC  Ta 6 (1)With a 100×100×2mm Al heat sink 5 (2)Without heat sink Class B push pull IC  VCE IC  IB 1.2 1.2 TC=25˚C VCE=2V TC=25˚C 1.0 1.0 Collector current IC (A) Collector current IC (A) 4 (1) 0.8 IB=5.0mA 0.8 4.5mA 4.0mA 3 0.6 3.5mA 0.6 3.0mA 2.5mA 2 0.4 2.0mA 0.4 1.5mA (2) 1 0 0 40 80 120 160 200 Ambient temperature Ta (°C) 0.2 1.0mA 0.5mA 0 0 0.4 0.8 1.2 1.6 2.0 Collector-emitter voltage VCE (V) 0.2 0 0 2 4 6 8 10 12 Base current IB (mA) .


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