Document
Power Transistors
2SC1568
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification Complementary to 2SA0900
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
■ Features
3.05±0.1
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances and high efficiency with a lowvoltage power supply
• TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
18
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
18
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
1
A
n u duct typed Peak collector current
ICP
2
A
te tin Pro ed Collector power dissipation
PC
1.2
W
ur tinu Junction temperature
Tj
150
°C
ing fo iscon Storage temperature
Tstg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
in n es follopwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C
a o includ type, Parameter
Symbol
Conditions
Min Typ Max Unit
c ued nce Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
18
V
M is ntin tena Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
18
V
isco ain Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
1
µA
D nanc e typ Collector-emitter cutoff current (Base open) ICEO VCE = 18 V, IB = 0
10
µA
inte anc Forward current transfer ratio
hFE1 * VCE = 2 V, IC = 500 mA
90
280
Ma inten hFE2 VCE = 2 V, IC = 1.5 A
50 100
ma Collector-emitter saturation voltage
VCE(sat) IC = 1 A, IB = 50 mA
0.5
V
laned Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
1.2
V
(p Transition frequency
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
150
MHz
Collector output capacitance (Common base, input open circuited)
Cob VCB = 6 V, IE = 0, f = 1 MHz
12
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification
Rank
Q
R
S
hFE1
90 to 155 130 to 210 180 to 280
Publication date: January 2003
SJD00093BED
1
2SC1568
Collector power dissipation PC (W)
Collector-emitter saturation voltage VCE(sat) (V)
PC Ta
6 (1)With a 100×100×2mm
Al heat sink
5
(2)Without heat sink Class B push pull
IC VCE
IC IB
1.2
1.2
TC=25˚C
VCE=2V
TC=25˚C
1.0
1.0
Collector current IC (A)
Collector current IC (A)
4 (1)
0.8
IB=5.0mA
0.8
4.5mA
4.0mA
3
0.6
3.5mA
0.6
3.0mA
2.5mA
2
0.4
2.0mA
0.4
1.5mA
(2) 1
0
0
40 80 120 160 200
Ambient temperature Ta (°C)
0.2
1.0mA
0.5mA
0 0 0.4 0.8 1.2 1.6 2.0
Collector-emitter voltage VCE (V)
0.2
0 0 2 4 6 8 10 12 Base current IB (mA)
.