G30N60C3D Datasheet: HGTG30N60C3D





G30N60C3D HGTG30N60C3D Datasheet

Part Number G30N60C3D
Description HGTG30N60C3D
Manufacture Intersil Corporation
Total Page 7 Pages
PDF Download Download G30N60C3D Datasheet PDF

Features: www.DataSheet4U.com HGTG30N60C3D Data S heet January 2000 File Number 4041.2 6 3A, 600V, UFS Series N-Channel IGBT wit h Anti-Parallel Hyperfast Diodes The HG TG30N60C3D is a MOS gated high voltage switching device combining the best fea tures of MOSFETs and bipolar transistor s. The device has the high input impeda nce of a MOSFET and the low on-state co nduction loss of a bipolar transistor. The much lower on-state voltage drop va ries only moderately between 25oC and 1 50oC. The IGBT used is the development type TA49051. The diode used in anti-pa rallel with the IGBT is the development type TA49053. The IGBT is ideal for ma ny high voltage switching applications operating at moderate frequencies where low conduction losses are essential. F ormerly Developmental Type TA49014. Fe atures • 63A, 600V at TC = 25oC • T ypical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 E C G O.

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Data Sheet
HGTG30N60C3D
January 2000 File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49051. The diode
used in anti-parallel with the IGBT is the development type
TA49053.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential.
Formerly Developmental Type TA49014.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60C3D TO-247
G30N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 63A, 600V at TC = 25oC
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

                    






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